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Creators/Authors contains: "Gaur, Anand_P S"

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  1. ; ; ; ; ; (, Applied Physics Letters)
    Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications. 
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    Free, publicly-accessible full text available November 18, 2025